Quantum efficiency of multiple quantum wells
OwnerLiang Wang, Ilyas Mohammed +1inventors
InventorsLiang Wang, Ilyas Mohammed, Masud Beroz
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Abstract
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
Claims18
An article of manufacture comprising:
- a p side for supplying holes;
- an n side for supplying electrons;
- and
- a plurality of quantum well periods between said p side and said n side, each of said quantum well periods comprising a quantum well layer and a barrier layer, each said barrier layer having a barrier height,
- wherein said plurality of quantum well periods comprise different barrier heights,
- wherein each said barrier layer has a barrier layer p type doping concentration, and wherein said plurality of quantum well periods comprise different barrier layer p type doping concentrations.
An article of manufacture comprising:
- a multiple quantum well light emitting diode comprising a plurality of quantum well periods;
- each of said quantum well periods comprising a quantum well layer and a barrier layer;
- each of said quantum well layers comprising a quantum well layer thickness and a quantum well layer area;
- each of said barrier layers comprising a barrier layer thickness, a barrier height and a barrier layer p-doping concentration;
- and wherein at least one of:
- said barrier height,
- quantum well layer area, and
- said barrier layer p-type doping concentration vary across said plurality of quantum well periods such that quantum well efficiency is improved in comparison to a device in which said barrier height, said quantum well layer area and said barrier layer p-type doping concentration are constant across said plurality of quantum well periods, and wherein said barrier height increases from an n side to a p side of said multiple quantum well light emitting diode.
Dependencies are inferred from the claim text.