Solderable contact regions
AssigneeSunPower Corporation
InventorThomas Pass
Life of this patent
Estimating the term…
Abstract
A contact region for a semiconductor substrate is disclosed. Embodiments can include forming a seed metal layer having an exposed solder pad region on the semiconductor substrate and forming a first metal layer on the seed metal layer. In an embodiment, a solderable material, such as silver, can be formed on the exposed solder pad region prior to forming the first metal layer. Embodiments can include forming a solderable material on the exposed solder pad region after forming the first metal layer. Embodiments can also include forming a plating contact region on the seed metal layer, where the plating contact region allows for electrical conduction during a plating process.
Claims18
A method for forming a contact region for a semiconductor substrate, the method comprising:
- forming a seed metal layer comprising a first exposed solder pad region and a first plating contact region on the semiconductor substrate, wherein the first plating contact region allows for electrical conduction during a plating process;
- forming the seed metal layer comprising a second exposed solder pad region;
- forming a solderable material on the first exposed solder pad region;
- and
- forming a first metal layer on the seed metal layer.
A method for forming a contact region for a semiconductor substrate, the method comprising:
- forming a seed metal layer comprising a first exposed solder pad region and a first plating contact region on the semiconductor substrate, wherein the first plating contact region allows for electrical conduction during a plating process;
- forming the seed metal layer comprising a second plating contact region;
- forming a solderable material on the first exposed solder pad region;
- and
- forming a first metal layer on the seed metal layer.
Dependencies are inferred from the claim text.