Back to results
US 8,971,114 B2Granted
Nonvolatile memory devices and driving methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Hwa Kang, Sang-Wan Nam, Donghyuk Chae, ChiWeon Yoon
Life of this patent
Estimating the term…
Abstract
Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.
Claims20
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of cell strings, the plurality of cell strings connected between a substrate layer and a plurality of bit lines, and connected to selection lines;
- and
- a gating circuit configured to drive at least one of the selection lines in at least two directions.
A method of driving a nonvolatile memory device, the method comprising:
- pre-charging a bit line connected to a selected cell string of a plurality of cell strings, the plurality of cell strings connected between a substrate and a plurality of bit lines;
- providing at least one selection signal to at least one selection line connected to the selected cell string on a first side of the plurality of cell strings;
- and
- providing the at least one selection signal to the at least one selection line on a second side of the plurality of cell strings.
1 more element
A nonvolatile memory device, comprising:
- a three-dimensional memory cell array including a plurality of memory cells arranged in a plurality memory cell array layers stacked on a substrate;
- a voltage supply device;
- and
- at least one selection line connected between the three-dimensional memory cell array and the voltage supply device, the voltage supply device connected to the selection line at a plurality of connection points.
1 more element
Dependencies are inferred from the claim text.