Semiconductor device including cladded base plate
AssigneeInfineon Technologies AG
InventorsAndreas Lenniger, Andre Uhlemann, Olaf Hohlfeld
Life of this patent
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Abstract
A semiconductor device includes a semiconductor chip joined with a substrate and a base plate joined with the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. The second metal layer has a sub-layer that has no pins and no pin-fins. The first metal layer has a first thickness and the sub-layer has a second thickness. The ratio between the first thickness and the second thickness is at least 4:1.
Claims35
A semiconductor device comprising:
- a semiconductor chip joined with a substrate;
- a base plate joined with the substrate, the base plate comprising a first metal layer directly clad to a second metal layer, the second metal layer deformed to provide a pin-fin or fin cooling structure, wherein
- the second metal layer comprises a sub-layer that has no pins and no pin-fins;
- the first metal layer comprises a first thickness;
- the sub-layer comprises a second thickness;
- the ratio between the first thickness and the second thickness is at least 4:1;
- and
- the first metal layer comprises a first material and the second metal layer comprises a second material different from the first material.
A semiconductor device comprising:
- a first metallized ceramic substrate;
- a first semiconductor chip joined with a first side of the first metallized ceramic substrate;
- and
- a base plate joined with a second side of the first metallized ceramic substrate, the second side opposite the first side, the base plate comprising a first layer comprising copper directly clad to a second layer comprising aluminum, the second layer deformed to provide a pin-fin or fin cooling structure, wherein
- the second metal layer comprises a sub-layer that has no pins and no pin-fins;
- the first metal layer comprises a first thickness;
- the sub-layer comprises a second thickness;
- and
- the ratio between the first thickness and the second thickness is at least 4:1.
A method for fabricating a semiconductor device, the method comprising:
- providing a cladded strip comprising a first metal layer directly clad to a second metal layer, the first metal layer comprising a first material and the second metal layer comprising a second material different from the first material;
- structuring the second metal layer to form a pin-fin or fin cooling structure;
- joining a semiconductor chip with a substrate;
- and
- joining the substrate with the first metal layer;
- wherein
- the second metal layer comprises a sub-layer that has no pins and no pin-fins;
- the first metal layer comprises a first thickness;
- the sub-layer comprises a second thickness;
- and
- the ratio between the first thickness and the second thickness is at least 4:1.
A method for fabricating a semiconductor device, the method comprising:
- providing a cladded strip comprising a first metal layer comprising copper directly clad to a second metal layer comprising aluminum;
- structuring the second metal layer to form a pin-fin or fin cooling structure;
- joining a semiconductor chip with a first side of a metallized ceramic substrate;
- joining a second side of the metallized ceramic substrate with the first metal layer, the second side opposite the first side;
- wherein
- the second metal layer comprises a sub-layer that has no pins and no pin-fins;
- the first metal layer comprises a first thickness;
- the sub-layer comprises a second thickness;
- and
- the ratio between the first thickness and the second thickness is at least 4:1.
Dependencies are inferred from the claim text.