Low-loss superconducting devices

A superconducting device, comprising:

• a substrate;
• a silicon nitride (SiN) seed layer disposed on the substrate, wherein the SiN seed layer has a thickness in a range of about 1 nm to about 3 nm;
• and
• a (200)-oriented texture titanium nitride (TiN) layer grown on the SiN seed layer using the SiN seed layer for nucleation of the (200)-oriented texture TiN layer growth.

An integrated circuit, comprising:

• a substrate;
• and
• one or more superconducting devices formed on the substrate,
• wherein each superconducting device comprises:
• a silicon nitride (SiN) seed layer disposed on the substrate, wherein the SiN seed layer has a thickness in a range of about 1 nm to about 3 nm;
• and
• a (200)-oriented texture titanium nitride (TiN) layer grown on the SiN seed layer using the SiN seed layer for nucleation of the (200)-oriented texture TiN layer growth.