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US 8,951,344 B2Granted
Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
AssigneeAMG IdealCast Solar Corporation
InventorNathan G. Stoddard
Life of this patent
Estimating the term…
Abstract
Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.
Claims26
A method of manufacturing cast silicon, comprising:
- placing a geometric arrangement of a plurality of silicon seed crystals on at least one surface in a crucible having one or more side walls heated to at least the melting temperature of silicon and at least one wall for cooling;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- placing molten silicon in contact with the geometric arrangement of monocrystalline silicon seed crystals;
- and
- forming a solid body comprising geometrically ordered multi-crystalline silicon, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten silicon to control crystallization, wherein the forming includes controlling a solid-liquid interface at an edge of the molten silicon during the cooling so as to move in a direction that increases a distance between the molten silicon and the at least one wall for cooling.
2 more elements
A method of manufacturing cast silicon, comprising:
- arranging a plurality of silicon seed crystals in a predetermined pattern on at least two surfaces of a crucible having one or more side walls heated to at least the melting temperature of silicon and at least one wall for cooling;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- placing molten silicon in contact with the plurality of monocrystalline silicon seed crystals;
- and
- forming a solid body comprising geometrically ordered multi-crystalline silicon, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten silicon from the at least two surfaces of the crucible to control crystallization, wherein the forming includes controlling a solid-liquid interface at an edge of the molten silicon during the cooling so as to move the interface in a direction that increases a distance between the molten silicon and the monocrystalline silicon seed crystals in the crucible.
2 more elements
A method of manufacturing cast silicon, comprising:
- placing a geometric arrangement of a plurality of silicon seed crystals on at least one surface in a crucible;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- placing silicon feedstock in contact with the plurality of silicon seed crystals on the at least one surface;
- heating the silicon feedstock and the plurality of silicon seed crystals to the melting temperature of silicon;
- controlling the heating so that the plurality of silicon seed crystals does not melt completely, the controlling comprising maintaining a .DELTA.T of about 0.1.degree. C./min or less, as measured on an outside surface of the crucible, after reaching the melting temperature of silicon elsewhere in the crucible;
- and, once the plurality of seed crystals are partially melted, forming a solid body comprising geometrically ordered multi-crystalline silicon by cooling the silicon.
3 more elements
A method of manufacturing cast silicon, comprising:
- arranging a plurality of silicon seed crystals in a predetermined pattern on at least two surfaces of a crucible;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- placing silicon feedstock in contact with the plurality of silicon seed crystals on the at least two surfaces;
- heating the silicon feedstock and the plurality of silicon seed crystals to the melting temperature of silicon;
- controlling the heating so that the plurality of silicon seed crystals does not melt completely, the controlling comprising maintaining a .DELTA.T of about 0.1.degree. C./min or less, as measured on an outside surface of the crucible, after reaching the melting temperature of silicon elsewhere in the crucible;
- and, once the plurality of seed crystals are partially melted, forming a solid body comprising geometrically ordered multi-crystalline silicon by cooling the silicon.
3 more elements
A method of manufacturing cast silicon, comprising:
- placing at least one geometric multi-crystalline silicon seed crystal on at least one surface in a crucible having one or more side walls heated to at least the melting temperature of silicon and at least one wall for cooling;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- placing molten silicon in contact with the at least one seed crystal;
- and
- forming a solid body comprising geometrically ordered multi-crystalline silicon, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten silicon to control crystallization, wherein the forming includes controlling a solid-liquid interface at an edge of the molten silicon during the cooling so as to move in a direction that increases a distance between the molten silicon and the at least one geometric multi-crystalline silicon seed crystal in the crucible.
2 more elements
A method of manufacturing cast silicon, comprising:
- placing a geometric arrangement of a plurality of silicon seed crystals on at least one surface in a crucible, the plurality of silicon seed crystals arranged to cover an entire or substantially an entire area of the at least one surface in the crucible;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- placing molten silicon in contact with the geometric arrangement of silicon seed crystals;
- and
- forming a solid body comprising geometrically ordered multi-crystalline silicon, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten silicon to control crystallization.
2 more elements
A method of manufacturing cast silicon, comprising:
- placing molten silicon in contact with at least one geometrically ordered multi-crystalline silicon seed crystal in a vessel having one or more side walls heated to at least the melting temperature of silicon, the at least one geometrically ordered multi-crystalline silicon seed crystal arranged to cover an entire or substantially an entire area of a surface of the vessel;
- melting a desired portion of at least one of the plurality of seed crystals by measuring the extent of melting;
- and
- forming a solid body comprising geometrically ordered multi-crystalline silicon, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten silicon to control crystallization.
1 more element
Dependencies are inferred from the claim text.