Receiving device and semiconductor integrated circuit

A semiconductor integrated circuit comprising:

• an oscillating section configured to generate a local oscillating signal for performing frequency conversion of one reception target channel of channels in broadcasting using a first frequency band and channels in broadcasting using a second frequency band different from the first frequency band;
• a first receiving section configured to perform generation of a channel signal for obtaining broadcasting output of the reception target channel on a basis of the generated local oscillating signal and a high-frequency signal in the first frequency band when the reception target channel is a channel in the first frequency band, and not to perform the generation but to prevent noise occurring in the receiving device from leaking into an antenna wire transmitting the high-frequency signal in the first frequency band when the reception target channel is a channel in the second frequency band;
• and
• a second receiving section configured to perform generation of the channel signal on a basis of the generated local oscillating signal and a high-frequency signal in the second frequency band when the reception target channel is a channel in the second frequency band, and not to perform the generation when the reception target channel is a channel in the first frequency band.