State responsive operations relating to flash memory cells
AssigneeDensbits Technologies Ltd.
InventorsAvi Steiner, Hanan Weingarten, Igal Maly, Avigdor Segal
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Abstract
A non-transitory computer readable medium, a flash controller and a method for state responsive encoding and programming; the method may include encoding an information entity by applying a state responsive encoding process to provide at least one codeword; wherein the state responsive encoding process is responsive to a state of flash memory cells; and programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state, the state being either an estimated state or an actual state.
Claims25
A method for state responsive operations relating to flash memory cells, the method comprises:
- encoding an information entity by applying a state responsive encoding process to provide at least one codeword;
- wherein the state responsive encoding process is responsive to a state of flash memory cells;
- and
- programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state, the state being either an estimated state or an actual state;
- wherein for a low wear level of the flash memory cells the encoding comprises using short codewords and the programming comprises applying analog equalization.
A method for state responsive operations relating to flash memory cells, the method comprises:
- encoding an information entity by applying a state responsive encoding process to provide at least one codeword;
- wherein the state responsive encoding process is responsive to a state of flash memory cells;
- programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state, the state being either an estimated state or an actual state;
- selecting an interleaving scheme to be applied during the state responsive programming process in response to the state;
- and
- selecting between
- programming different portions of a same codeword by a same type of programming, and
- programming different portions of the same codeword by different types of programming;
- wherein the different types of programming comprise at least two out of most significant bit (MSB) programming, central significant bit (CSB) programming and least significant bit (LSB) programming.
A method for state responsive operations relating to flash memory cells, the method comprises:
- encoding an information entity by applying a state responsive encoding process to provide at least one codeword;
- wherein the state responsive encoding process is responsive to a state of flash memory cells;
- programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state, the state being either an estimated state or an actual state;
- selecting a threshold voltage distribution affecting scheme in response to the state;
- and
- selecting a threshold voltage distribution affecting parameter out of a start program value, a program voltage step size and a program voltage step window.
A non-transitory computer readable medium that stores instructions for:
- encoding an information entity by applying a state responsive encoding process to provide at least one codeword;
- wherein the state responsive encoding process is responsive to a state of flash memory cells;
- and
- programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state;
- the state being either an estimated state or an actual state;
- wherein for a low wear level of the flash memory cells the encoding comprises using short codewords and the programming comprises applying analog equalization.
A flash memory controller, comprising:
- an encoding circuit configured to encode an information entity by applying a state responsive encoding process to provide at least one codeword;
- wherein the state responsive encoding process is responsive to a state of flash memory cells;
- and
- a programming circuit configured to program the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state;
- the state being either an estimated state or an actual state;
- wherein for a low wear level of the flash memory cells the encoding comprises using short codewords and the programming comprises applying analog equalization.
A method for state responsive programming, the method comprises programming at least one codeword to at least one group of flash memory cells by applying at least two state responsive programming operations, each state responsive programming operation is responsive to a state of flash memory cells;
- and selecting between (a) programming different portions of a same codeword by a same type of programming, and (b) programming different portions of the same codeword by different types of programming, wherein the different types of programming comprise at least two out of most significant bit (MSB) programming, central significant bit (CSB) programming and least significant bit (LSB) programming.
Dependencies are inferred from the claim text.