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US 8,947,923 B2Granted
Memory cells with rectifying device
AssigneeMicro Technology, Inc.
InventorJun Liu
Life of this patent
Estimating the term…
Abstract
Memory devices and methods described are shown that provide improvements, including improved cell isolation for operations such as read and write. Further, methods and devices for addressing and accessing cells are shown that provide a simple and efficient way to manage devices with multiple cells associated with each access transistor. Examples of multiple cell devices include phase change memory devices with multiple cells associated with each access transistor.
Claims19
A method, comprising:
- activating an access line to select a plurality of access nodes in a memory array;
- selecting a memory cell in a memory block, wherein there are multiple resistance changing cells, each phase change cell formed from edge portions of a continuous structure associated with each access node;
- and
- detecting an electrical signal that passes through a rectifying device and a respective one of the memory cells.
1 more element
A method, comprising:
- activating a plurality of access transistors in a memory array;
- selecting a memory cell in a memory block, wherein there are multiple phase change cells, each phase change cell formed from edge portions of a continuous structure associated with each access transistor;
- and
- detecting an electrical signal that passes through a rectifying device and a respective one of the memory cells.
1 more element
A method, comprising:
- activating an access line to select a plurality of access nodes in a memory array;
- selecting a memory cell in a memory block, wherein there are multiple resistance changing cells formed from portions of a continuous ring-like structure associated with each access node;
- and
- detecting an electrical signal that passes through a rectifying device and a respective one of the memory cells.
1 more element
Dependencies are inferred from the claim text.