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AssigneeAvalanche Technology, Inc.
InventorsEbrahim Abedifard, Parviz Keshtbod
Estimating the term…
A magnetic random access memory (MRAM) array having a magnetic tunnel junction (MTJ) to be read using a magnetic state of the MTJ, the MTJ being read by applying a current there through. Further, the MRAM array has a reference MTJ, a sense amplifier coupled to the MTJ and the reference MTJ, the sense amplifier operable to compare the voltage of the MTJ to the reference MTJ in determining the state of the MTJ; a first capacitor coupled to the sense amplifier at a first end and to ground at a second end; and a second capacitor coupled to the sense amplifier at a first end and to ground at a second end, the first capacitor storing the, wherein short voltage pulses are applied to the first end of each of the first and second capacitors when reading the MTJ thereby makes the current flowing through the MTJ there through for small time intervals thereby avoiding read disturbance to the MTJ.
A magnetic random access memory (MRAM) array comprising:
A method of reading a magnetic tunnel junction (MTJ) of a magnetic random access memory (MRAM) array comprising:
A magnetic random access memory (MRAM) array comprising:
Dependencies are inferred from the claim text.