High capacity low cost multi-stacked cross-line magnetic memory

A method of manufacturing a diode-addressable current-induced magnetization switching (CIMS) memory element comprising:

• Forming decoder transistors on a CMOS substrate;
• Depositing a first metal layer on top of the decoder transistors;
• Depositing a magnetic tunnel junction (MTJ) on the first metal layer, etching, depositing a second metal layer on top of the first metal layer and depositing silicon oxide on the etched second metal layer;
• Depositing a third metal layer on top of the silicon oxide to form an erase line;
• Depositing a magnetic shielding layer to form a first stack;
• forming a second stack on top of the first stack.