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AssigneeInternational Business Machines Corporation
InventorsDaniel C. Worledge, Guohan Hu
Estimating the term…
A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.
A method of writing to a tunnel junction of a thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus, the thermal spin torque transfer MRAM apparatus including a magnetic tunnel junction having a reference layer, a tunnel barrier layer, and a free layer, the free layer comprising a first layer having a first Curie temperature and a second layer having a second Curie temperature, the method comprising:
Dependencies are inferred from the claim text.