High-efficiency driving stage for phase change non-volatile memory devices

A phase change non-volatile memory device comprising:

• an array of memory cells;
• and
• a driving stage operatively coupled to said array of memory cells, and comprising
• an output driving unit configured to supply an output driving current during a programming operation of at least one memory cell,
• a driving-control unit configured to receive an input current and to generate on a control output a first control signal configured to control supply of the output driving current by said output driving unit in such a way that a value of the output driving current is based upon the input current, and
• a level-shifter between the control output of said driving-control unit and a control input of said output driving unit, and configured to determine a level shift of a voltage of the first control signal for supplying to said control input of said output driving unit a second control signal having a voltage value that is increased with respect to, and is based upon the first control signal.

A method of driving a phase change non-volatile memory device, the method comprising:

• supplying an output driving current, with an output driving unit, during an operation of programming of at least one memory cell of the phase change non-volatile memory device;
• receiving an input current at a driving-control unit to generate on a control output a first control signal configured to control supply of the output driving current by the output driving unit in such a way that a value of the output driving current is based upon the input current;
• and
• using a level-shifter between the control output of the driving-control unit and a control input of the output driving unit to determine a level shift of a voltage of the first control signal for supplying to said control input of said output driving unit a second control signal having a voltage value that is increased with respect to, and is based upon the first control signal.