Photoelectric conversion element, light receiving device, light receiving system, and distance measuring device
AssigneeHonda Motor Co., Ltd.
InventorsTomoyuki Kamiyama, Keisuke Korekado
Life of this patent
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Abstract
A first photoelectric conversion element, which detects light and converts the light into photoelectrons has: one MOS diode having an electrode formed on a semiconductor base body with an insulator therebetween; and a plurality of embedded photodiodes formed in the semiconductor base body. The electrode of the MOS diode has, when viewed from the upper surface, a comb-like shape wherein a plurality of branch portions are branched from one electrode portion. Each of the embedded photodiodes is disposed to nest between the branch portions of the electrode when viewed from the upper surface.
Claims10
A photoelectric conversion element for detecting light and converting the light into photoelectrons, comprising:
- one metal-oxide-semiconductor (MOS) diode having an electrode formed on a semiconductor substrate with an insulator therebetween;
- and
- plural embedded photodiodes that are embedded in the semiconductor substrate,
- wherein the electrode of the MOS diode has a comb-like shape when viewed from an upper surface thereof, in which plural branch portions are branched from one electrode portion, and
- the plural embedded photodiodes are nested, respectively, between the branch portions of the electrode when viewed from the upper surface thereof,
- wherein the potential under the electrode of the MOS diode is controlled, such that the photoelectrons generated by photoelectric conversion at the embedded photodiodes migrate toward the MOS diode.
A light receiving device that acquires luminance information of incident light, comprising:
- a photoelectric conversion element, which detects and converts the incident light into photoelectrons;
- a charge accumulating unit for accumulating photoelectrons generated by the photoelectric conversion element;
- a capacitor that stores the photoelectrons at a fixed time period;
- a charge discharging unit that discharges the photoelectrons;
- a first metal-oxide-semiconductor (MOS-type switching element disposed between the charge accumulating unit and the capacitor for causing the photoelectrons accumulated in the charge accumulating unit to migrate toward the capacitor;
- and
- a second MOS-type switching element disposed between the charge accumulating unit and the charge discharging unit for controlling discharge of the photoelectrons from the charge accumulating unit to the charge discharging unit,
- wherein the photoelectric conversion element comprises:
- one MOS diode having an electrode formed on a semiconductor substrate with an insulator therebetween;
- and
- plural embedded photodiodes embedded in the semiconductor substrate,
- wherein the electrode of the MOS diode has a comb-like shape when viewed from an upper surface thereof, in which plural branch portions are branched from one electrode portion,
- the plural embedded photodiodes are nested, respectively, between the plural branch portions of the electrode when viewed from the upper surface thereof, and
- the photoelectrons from the photoelectric conversion element are transferred to the capacitor by selectively controlling opening or closing of the first MOS-type switching element and the second MOS-type switching element, wherein luminance information of incident light is acquired based on a charge amount of the photoelectrons transferred to the capacitor.
Dependencies are inferred from the claim text.