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US 8,946,912 B2Granted
Active area bonding compatible high current structures
AssigneeIntersil Americas Inc.
InventorsJohn T. Gasner, Michael D. Church, Sameer D. Parab, Paul E. Bakeman, Jr., David A. Decrosta, Robert Lomenick, Chris A. McCarty
Life of this patent
Estimating the term…
Abstract
A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.
Claims15
A method of forming a semiconductor structure, the method comprising:
- forming one or more intermediate metal layers above a substrate;
- forming one or more insulation layers, each of the one or more insulation layers formed above a respective one of the one or more intermediate metal layers;
- forming a top metal layer above the one or more insulation layers, wherein each of the one or more insulation layers separates the respective one of the one or more intermediate metal layers and the top metal layer from each other;
- forming one or more conductor lines directly under an exposed portion of the top metal layer, each of the one or more conductor lines formed from portions of a respective one of the one or more intermediate metal layers;
- forming a passivation layer over the top metal layer;
- and
- patterning the passivation layer to expose a portion of the top metal layer, the exposed portion of the top metal layer comprising a bond pad, the one or more conductor lines directly underlying the exposed portion of the top metal layer being electrically isolated from the bond pad by an insulating material;
- wherein one of the one or more insulation layers adjacent the top metal layer is relatively thicker than the remaining insulation layers and the top metal layer.
5 more elements
A method of forming a semiconductor structure, the method comprising:
- forming one or more intermediate metal layers above a substrate;
- forming a top metal layer above the one or more intermediate metal layers, wherein the one or more intermediate metal layers and the top metal layer are separated from each other with respective portions of insulating material;
- forming a passivation layer over the top metal layer;
- and
- patterning the passivation layer to expose a portion of the top metal layer, the exposed portion of the top metal layer comprising a bond pad;
- forming one or more conductor lines directly under the exposed portion of the top metal layer, each of the one or more conductor lines formed from portions of a respective one of the one or more intermediate metal layers;
- wherein the one or more conductor lines directly underlying the exposed portion of the top metal layer are electrically isolated from the bond pad by the insulating material;
- wherein the respective portion of the insulating material formed between the bond pad and the underlying conductor line located closest to the top metal layer is relatively thicker than the remaining portions of the insulating material separating the conductor lines from each other.
5 more elements
A semiconductor structure comprising:
- a substrate;
- one or more intermediate metal layers above the substrate;
- a top metal layer above the one or more intermediate metal layers, wherein the one or more intermediate metal layers and the top metal layer are separated from each other with respective portions of insulating material;
- a passivation layer overlying the top metal layer and patterned to expose a surface of the top metal layer, the exposed surface of the top metal layer comprising a bond pad;
- and
- one or more conductor lines underlying the top metal layer, each of the one or more conductor lines formed from portions of a respective one of the one or more intermediate metal layers, the one or more conductor lines directly underlying the exposed portion of the top metal layer being electrically isolated from the bond pad by the respective portions of insulating material;
- wherein the respective portion of the insulating material between the bond pad and the closest conductor line located under the bond pad is relatively thicker than the remaining portions of the insulating material separating the intermediate metal layers from each other.
4 more elements
Dependencies are inferred from the claim text.