Substrate vias for heat removal from semiconductor die

A substrate, comprising:

• a plurality of layers, a first side and a second side;
• and a via extending through the plurality of layers from the first side to the second side, the via comprising:
• a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area;
• a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via on a first side and is adapted to electrically contact a semiconductor die disposed over a top of a second side opposing the first side;
• a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area;
• and
• a second capture pad disposed under the second layer, the second capture pad having a second cross-sectional area that is greater than the first cross-sectional area, wherein the second capture pad physically contacts the second substrate via;
• a third substrate via extending through a third layer of the plurality of layers, the third substrate via having a third cross-sectional area that is greater than the second cross-sectional area, wherein the third substrate via physically contacts the second capture pad;
• and
• a third capture pad disposed under the third layer, wherein the third capture pad physically contacts the third substrate via.

A semiconductor package, comprising:

• a substrate comprising a plurality of layers, a first side and a second side;
• and a via extending through the substrate from the first side to the second side, the via comprising:
• a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area;
• a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via;
• a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area;
• and
• a second capture pad disposed under the second substrate via, the second capture pad having a second cross-sectional area that is greater than the first cross-sectional area, wherein the second capture pad physically contacts the second substrate via;
• a third substrate via extending through a third layer of the plurality of layers, the third substrate via having a third cross-sectional area that is greater than the second cross-sectional area, wherein the third substrate via physically contacts the second capture pad;
• and
• a third capture pad disposed under the third layer, wherein the third capture pad physically contacts the third substrate via, wherein the first capture pad has a first cross-sectional areal dimension and the second capture pad has a second cross-sectional areal dimension, which is greater than the first cross-sectional areal dimension, and the third capture pad has a third cross-sectional areal dimension that is the same as the second cross-sectional areal dimension.

A substrate, comprising:

• a plurality of layers, a first side and a second side;
• and a via extending through the substrate from the first side to the second side, the via comprising:
• a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area;
• a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via;
• a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area;
• and
• a second capture pad disposed under the second layer, the second capture pad having a second cross-sectional area that is greater than the first cross-sectional area, wherein the second capture pad physically contacts the second substrate via;
• a third substrate via extending through a third layer of the plurality of layers, the third substrate via having a third cross-sectional area that is greater than the second cross-sectional area, wherein the third substrate via physically contacts the second capture pad;
• and
• a third capture pad disposed under the third layer, the third capture pad physically contacting the third substrate via, wherein the first capture pad has a first cross-sectional areal dimension and the second capture pad has a second cross-sectional areal dimension, which is greater than the first cross-sectional areal dimension, and the third capture pad has a third cross-sectional areal dimension that is the same as the second cross-sectional areal dimension.