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US 8,946,898 B2Granted
Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus
AssigneeSony Corporation
InventorsHiroshi Takahashi, Shunichi Sukegawa, Keishi Inoue
Life of this patent
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Abstract
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
Claims22
A semiconductor device, comprising:
- a first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array and a first wiring layer;
- a second material layer including a second wiring layer;
- a first via passing through the first material layer and reaching a second interconnect provided in the second wiring layer;
- and
- a second via reaching a first interconnect provided in the first wiring layer,
- wherein,
- a size of the first via on the second interconnect is different from that of the second via on the first interconnect.
4 more elements
An electronic apparatus, comprising:
- a solid-state imaging apparatus;
- an optical system that guides light to the solid-state imaging apparatus;
- a signal processing circuit, wherein the signal processing circuit processes an output signal of the solid-state imaging apparatus,
- wherein the solid-state imaging apparatus includes:
- a first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array and a first wiring layer;
- a second material layer including a second wiring layer;
- a first via passing through the first material layer and reaching a second interconnect provided in the second wiring layer;
- and
- a second via reaching a first interconnect provided in the first wiring layer,
- wherein,
- a size of the first via on the second interconnect is different from that of the second via on the first interconnect.
8 more elements
A semiconductor device, comprising:
- a first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array and a first wiring layer;
- a second material layer including a second wiring layer;
- a first via passing through the first material layer and reaching a second interconnect provided in the second wiring layer, wherein the first via has a first size in a region of the first via adjacent the second interconnect;
- and
- a second via reaching a first interconnect provided in the first wiring layer, wherein the second via has a second size in a region of the second via adjacent the first interconnect, and
- wherein,
- a size of the first via on the second interconnect and in the region of the first via adjacent the second interconnect is different than the size of the second via on the first interconnect and in the region of the second via adjacent the first interconnect.
4 more elements
Dependencies are inferred from the claim text.