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US 8,946,897 B2Granted
Semiconductor device having metal lines with slits
AssigneeConversant Intellectual Property Management Inc.
InventorsSang-Hyun Yi, Young-Nam Kim
Life of this patent
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Abstract
A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.
Claims27
A semiconductor device, comprising:
- a semiconductor substrate;
- an integrated circuit on the semiconductor substrate;
- an insulation layer covering the integrated circuit;
- a barrier layer covering the insulation layer;
- and
- a plurality of metal line patterns on the barrier layer, wherein first and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit adjacent to the space.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an integrated circuit on the semiconductor substrate;
- an insulation layer covering the integrated circuit;
- a plurality of metal line patterns over the insulation layer, wherein first and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit adjacent to the space;
- and
- a barrier layer between the plurality of metal line patterns and the insulation layer.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an integrated circuit on the semiconductor substrate;
- a first insulation layer covering the integrated circuit;
- a second insulation layer covering the first insulation layer;
- and
- a plurality of metal line patterns on the second insulation layer, wherein first and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit adjacent to the space.
3 more elements
Dependencies are inferred from the claim text.