Back to results
US 8,946,894 B2Granted
Package for high-power semiconductor devices
AssigneeTriQuint Semiconductor, Inc.
InventorsTarak A. Railkar, Deep C. Dumka
Life of this patent
Estimating the term…
Abstract
Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.
Claims8
An apparatus comprising:
- a metal carrier;
- a first thermal spreader layer coupled with the metal carrier;
- a second thermal spreader layer coupled with the first thermal spreader layer by an adhesive, wherein the first and second thermal spreader layers are composed of the same material;
- and
- a die coupled with the second thermal spreader layer.
2 more elements
A system comprising:
- a radio frequency (RF) front end configured to transmit or receive radio frequency signals;
- a power supply coupled with the RF front end to provide power to the RF front end;
- and
- a gallium nitride (GaN) high electron mobility transistor (HEMT) device in the RF front end to provide power amplification or in the power supply to provide power management, the GaN HEMT including:
- a GaN die;
- a plurality of thermal spreader layers coupled with the GaN die;
- an adhesive layer coupled between individual thermal spreader layers;
- and
- a metal carrier coupled with the plurality of thermal spreader layers.
6 more elements
Dependencies are inferred from the claim text.