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US 8,946,881 B2Granted
High-voltage packaged device
AssigneeFairchild Semiconductor Corporation
InventorRichard A. Dunipace
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AssigneeFairchild Semiconductor Corporation
InventorRichard A. Dunipace
Estimating the term…
Packaged devices and methods for making and using the same are described. The packaged devices contain one or more circuit components, such as a die, that is attached to a leadframe having a first lead, a second lead, and a third lead (although, higher lead counts may be employed in some implementations). A portion of the circuit component and the leadframe are encapsulated in a molded housing so that the first lead is exposed from a first end of the housing while the second and third leads are exposed from a second end of the housing. In some configurations, the packaged device does not contain a fourth lead that is both electrically connected to the first lead and that is exposed from the second end of the molded housing. In other configurations, an area extending from the second lead to the third lead in the molded housing comprises an insulating material having a substantially uniform conductivity. Thus, the packaged devices have relatively large creepage and clearance distances between the first lead and the second and third leads. As a result, the packaged devices are able to operate at relatively high operating voltages without experiencing voltage breakdown. Other embodiments are described.
A DPAK or D2PAK semiconductor packaged device operating with a high voltage capability above 1.8 KV, comprising:
A DPAK or D2PAK semiconductor packaged device operating with a high voltage capability above 1.8 KV, comprising:
An electronic apparatus, comprising:
Dependencies are inferred from the claim text.