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US 8,946,876 B2Granted
Semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorTsuyoshi Seto
Life of this patent
Estimating the term…
Abstract
A gate electrode (4) and a source electrode (5) of a semiconductor chip (3) are connected to a gate terminal (7) and a source terminal (9), respectively, via electric conductors (11a and 11b). A portion of the gate terminal (7) which portion is joined to the electric conductor (11a) is close to the gate electrode (4), and a portion of the source terminal (9) which portion is joined to the electric conductor (11b) is close to the source electrode (5).
Claims14
A semiconductor device comprising:
- a metal plate;
- one semiconductor element provided on the metal plate;
- and
- at least three lead terminals electrically connected to the semiconductor element,
- the semiconductor element having at least one electrode on its first surface and being provided on the metal plate so that a second surface opposite to the first surface faces the metal plate,
- the lead terminals being provided so as not to overlap the semiconductor element,
- the at least one electrode on the first surface of the semiconductor element being connected to one of or different ones of the lead terminals via an electric conductor or respective electric conductors,
- a joined portion of the one of or each of the different ones of the lead terminals being close to the at least one electrode, the joined portion being joined to the electric conductor or a corresponding one of the electric conductors via which the at least one electrode and the one of or the different ones of the lead terminals are connected to each other, and
- the at least one electrode being connected to the one of or the different ones of the lead terminals via the electric conductor or the respective electric conductors such that a joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the at least one electrode being even with a joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the one of or the different ones of the lead terminals,
- the semiconductor device further comprising:
- an insulating spacer,
- the one of or the different ones of the lead terminals connected to the electric conductor or the respective electric conductors being each supported on the metal plate via the spacer, and
- the spacer being provided under the joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the one of or the different ones of the lead terminals.
10 more elements
A semiconductor device comprising:
- a metal plate;
- a plurality of semiconductor elements provided on the metal plate;
- and
- at least three lead terminals electrically connected to the plurality of semiconductor elements,
- the plurality of semiconductor elements having at least one electrode on each of their first surfaces and being provided on the metal plate so that second surfaces opposite to the first surfaces face the metal plate,
- the lead terminals being provided so as not to overlap the plurality of semiconductor elements,
- at least one of all the electrodes on the first surfaces of the plurality of semiconductor elements being connected to one of or different ones of the lead terminals via an electric conductor or respective electric conductors,
- a joined portion of the one of or each of the different ones of the lead terminals being close to the at least one of all the electrodes, the joined portion being joined to the electric conductor or a corresponding one of the electric conductors via which the at least one of all the electrodes and the one of or the different ones of the lead terminals are connected to each other, and
- the at least one of all the electrodes being connected to the one of or the different ones of the lead terminals via the electric conductor or the respective electric conductors such that a joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the at least one of all the electrodes being even with a joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the one of or the different ones of the lead terminals,
- the semiconductor device further comprising:
- an insulating spacer,
- the one of or the different ones of the lead terminals connected to the electric conductor or the respective electric conductors being each supported on the metal plate via the spacer, and
- the spacer being provided under the joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the one of or the different ones of the lead terminals.
10 more elements
Dependencies are inferred from the claim text.