Method for producing a semiconductor
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Hans-Joachim Schulze, Helmut Strack, Hans-Joerg Timme, Wolfgang Werner
Life of this patent
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Abstract
A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
Claims20
A semiconductor device comprising:
- a semiconductor body having a first side and a second side;
- a p-doped semiconductor zone within the semiconductor body adjacent the second side;
- an n-doped shoulder in a region between the n-type dopant minimum and the pn junction in the n-doped semiconductor zone.
A semiconductor device comprising:
- a semiconductor body having a first side and a second side;
- a p-doped semiconductor zone within the semiconductor body adjacent the second side;
- an n-doped semiconductor zone within the semiconductor body adjacent the first side such that the semiconductor body comprises a pn junction, the n-doped semiconductor zone comprising an n-type dopant maximum nearer to the pn junction than to a surface of the first side of the semiconductor body;
- and
- an n-doped shoulder in a region between the n-type dopant maximum and the pn junction in the n-doped semiconductor zone.
A semiconductor device comprising:
- a semiconductor body having a first side and a second side;
- a p-doped zone within the semiconductor body;
- an n-doped zone within the semiconductor body adjacent the first side such that the semiconductor body comprises a pn junction, the n-doped zone comprising an n-type dopant maximum nearer to the pn junction than to a surface of the first side of the semiconductor body;
- and
- an n-doped shoulder in a region between the n-type dopant maximum and the pn junction in the n-doped zone.
A semiconductor device comprising:
- a semiconductor body having a first side and a second side;
- a p-doped zone within the semiconductor body;
- an n-doped zone within the semiconductor body adjacent the first side such that the semiconductor body comprises a pn junction, the n-doped zone comprising an n-type dopant maximum nearer to the pn junction than to a surface of the first side of the semiconductor body;
- a region having an n-type dopant minimum between the n-type dopant maximum and the pn junction in the n-doped zone;
- and
- an n-doped shoulder in a region between the n-type dopant minimum and the pn junction in the n-doped zone.
Dependencies are inferred from the claim text.