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US 8,946,871 B2Granted
Thermal improvement of integrated circuit packages
AssigneeLSI Corporation
InventorsZeki Z. Celik, Allen S. Lim, Atila Mertol
Life of this patent
Estimating the term…
Abstract
An integrated circuit package comprising an active semiconductor device layer and at least one heat-transfer semiconductor layer on the active semiconductor device layer. The heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer.
Claims20
An integrated circuit package, comprising:
- an active semiconductor device layer;
- and
- at least one heat-transfer semiconductor layer on the active semiconductor device layer, wherein the heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer, and, the heat-transfer semiconductor layer directly contacts the active semiconductor device layer.
A method of manufacturing an integrated circuit package, comprising:
- providing an active semiconductor device layer;
- and
- placing at least one heat-transfer semiconductor layer on the active semiconductor device layer, wherein the heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer, and the heat-transfer semiconductor layer directly contacts the active semiconductor device layer.
Dependencies are inferred from the claim text.