Semiconductor component with optimized edge termination

A semiconductor component, comprising:

• a semiconductor body with a first side, a second side, and an edge,
• an inner zone with a basic doping of a first conduction type,
• a first semiconductor zone, which is disposed between the first side and the inner zone and is of the first conduction type with a doping concentration higher than that of the inner zone,
• a second semiconductor zone, disposed between the second side and the inner zone and is of a second conduction type complementary to the first conduction type with a doping concentration higher than that of the inner zone,
• at least one first edge chamfer extending at a first angle to the extension plane of a transition from the second semiconductor zone to the inner zone at least along the edge of the second semiconductor zone and the inner zone,
• wherein at least one buried semiconductor zone of the second conduction type with a doping concentration higher than that of the inner zone is provided between the first semiconductor zone and the inner zone, and extends substantially parallel to the first semiconductor zone,
• wherein a second edge chamfer with a second angle with respect to a transition from the first semiconductor zone to the inner zone is provided, which extends at least along edge of the first semiconductor zone and the buried semiconductor zone, wherein the absolute value of the second angle is smaller than the absolute value of the first angle.