Gallium—nitride-on-handle substrate materials and devices and method of manufacture
AssigneeSoraa, Inc.
InventorsMark P. D'Evelyn, Arpan Chakraborty, William D. Houck
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Abstract
A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
Claims20
A gallium and nitrogen containing device comprising:
- a gallium and nitrogen containing material, wherein,
- the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;
- the first surface region is opposite the second surface region;
- and
- the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;
- an interface region overlying the second surface region;
- at least one n-type epitaxial growth region overlying the interface region;
- a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;
- an active region overlying the at least one n-type epitaxial growth region;
- a p-type region overlying the active region;
- a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective;
- and
- at least one p-contact region overlying the first handle substrate.
A gallium and nitrogen containing device comprising:
- a gallium and nitrogen containing material, wherein,
- the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;
- the first surface region is opposite the second surface region;
- and
- the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;
- an interface region overlying the second surface region;
- at least one n-type epitaxial growth region overlying the interface region;
- a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;
- an active region overlying the at least one n-type epitaxial growth region;
- a p-type region overlying the active region;
- one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions;
- at least one electrical contact region overlying a core region surrounded by a via or street structure;
- and
- at least one handle substrate.
Dependencies are inferred from the claim text.