Semiconductor device and related fabrication methods

A semiconductor device comprising:

• a collector region of semiconductor material having a first conductivity type;
• a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type;
• and
• a first doped region of semiconductor material having the second conductivity type;
• a support layer of semiconductor material;
• a buried layer of dielectric material overlying the support layer;
• and
• a second doped region of semiconductor material overlying the buried layer, wherein:
• the first doped region is electrically connected to the base region;
• the collector region resides between the base region and the first doped region;
• and
• the collector region overlies the second doped region.

A bipolar transistor comprising:

• a buried region having a first conductivity type;
• a collector region overlying the buried region, the collector region having a second conductivity type opposite the first conductivity type;
• a base region within the collector region, the base region having the first conductivity type, wherein at least a first portion of the collector region resides between the base region and the buried region;
• and
• a sinker region having the first conductivity type, wherein:
• the sinker region abuts the buried region;
• at least a second portion of the collector region resides between the sinker region and the base region;
• and
• the sinker region is electrically connected to the base region.

A semiconductor device comprising:

• a collector region of semiconductor material having a first conductivity type;
• a sinker region of semiconductor material having a second conductivity type opposite the first conductivity type, wherein the sinker region laterally surrounds the collector region;
• a base region of semiconductor material having the second conductivity type within the collector region, at least a first portion of the collector region resides between the sinker region and the base region;
• an emitter region of semiconductor material within the base region, the emitter region having the first conductivity type;
• and
• a buried region of semiconductor material having the second conductivity type, wherein:
• the collector region overlies the buried region;
• the sinker region abuts the buried region;
• the sinker region and the buried region are electrically connected to the base region;
• and
• at least a second portion of the collector region resides between the base region and the buried region.