Diffusion sidewall for a semiconductor structure

A semiconductor structure comprising:

• a plurality of semiconductor devices formed within active regions;
• an isolation region separating the active regions;
• and
• a diffusion sidewall formed of in-situ doped epitaxial grown material, the diffusion sidewall formed at an interface between one of the active regions and the isolation region;
• wherein the in-situ doped material comprises boron (B) doped or boron (B), carbon (C) doped silicon (Si) or silicon germanium (SiGe), wherein a lower boron concentration is formed towards an interface of the active region than towards an interface of the isolation region.

A semiconductor structure comprising:

• a silicon-on-insulator (SOI) substrate;
• first and second active regions formed of semiconductor material;
• a shallow trench isolation region separating the first and second active regions;
• and
• diffusion sidewalls formed of in-situ doped epitaxial grown material, the diffusion sidewalls are formed along sidewalls of an SOI layer formed at one of the first and second active regions and interfacing with the isolation region.