Integration of a titania layer in an anti-reflective coating

An anti-reflective coating (ARC) structure comprising:

• a semiconductor substrate having a first region, a second region, and a third region, wherein said second region is positioned between said first and third regions;
• a first dielectric material layer located continuously on a topmost surface of said first region and on a topmost surface of the third region of said semiconductor substrate, but not said second region of said semiconductor substrate;
• a titania layer located continuously on a topmost surface of said first dielectric material layer on said first region and the third region of said semiconductor substrate, but not said second region of said semiconductor substrate;
• a first metallic portion located directly on a topmost surface of said second region of said semiconductor substrate, but not said titania layer;
• a second metallic material portion having a first portion in direct physical contact with an entire topmost surface of said first metallic portion, a second portion located directly on a portion of a topmost surface of said titania layer within said first region and a third portion located directly on a portion of a topmost surface of said titania layer within said third region;
• and
• a second dielectric material layer that is in direct physical contact with an exposed portion of said titania layer in said first and third regions and that is in direct physical contact with at least an outer surface portion of said second metallic material portion, wherein said first dielectric material layer, said titania layer, and said second dielectric material layer collectively constitute an anti-reflective coating layer.