Solid-state image sensing device

A solid-state image sensing device comprising:

• a light-receiving region;
• a gate electrode adjacent to the light-receiving region;
• a first silicon oxide film arranged above the light-receiving region and the gate electrode;
• a first silicon nitride film arranged directly over the light-receiving region and the gate electrode via the first silicon oxide film;
• a second silicon oxide film arranged above the first silicon nitride film;
• and
• a second silicon nitride film arranged on an upper face of the second silicon oxide film and over the light-receiving region,
• wherein the first silicon nitride film includes a portion extending beyond a position under an edge of the second silicon nitride film.

A solid-state image sensing device comprising:

• a light-receiving region;
• a gate electrode;
• a plurality of wiring layers;
• a first silicon oxide film disposed on the light-receiving region and the gate electrode;
• a first silicon nitride film disposed on the first silicon oxide film and arranged above the light-receiving region and the gate electrode;
• a second silicon oxide film, having a planarized surface located above the light-receiving region, disposed on the first silicon nitride film;
• and
• a second silicon nitride film disposed on the planarized surface of the second silicon oxide film, and below a lowermost wiring layer of the plurality of wiring layers,
• wherein the first silicon nitride film includes a portion extending beyond a position under an edge of the second silicon nitride film.