Solid-state imaging element and electronic device including a pixel separating section
AssigneeSony Corporation
InventorMasashi Nakazawa
Life of this patent
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Abstract
Disclosed herein is a solid-state imaging element including: a semiconductor layer; a plurality of photoelectric conversion sections arranged within the semiconductor layer; and a pixel separating section disposed in a shape of a same width from a light receiving surface of the semiconductor layer to an opposite surface of the semiconductor layer from the light receiving surface in a position of separating the photoelectric conversion sections from each other for each pixel, the pixel separating section being formed by a material including an impurity.
Claims10
A solid-state imaging element comprising:
- a semiconductor layer;
- a plurality of photoelectric conversion sections arranged within the semiconductor layer;
- and
- a pixel separating section having uniform width from a light receiving surface of the semiconductor layer to an opposite surface of the semiconductor layer from the light receiving surface and disposed in a position separating the photoelectric conversion sections from each other for each pixel, the pixel separating section being formed by a crystalline semiconductor including an impurity.
An electronic device comprising:
- a semiconductor layer;
- a plurality of photoelectric conversion sections arranged within the semiconductor layer;
- a pixel separating section having uniform width from a light receiving surface of the semiconductor layer to an opposite surface of the semiconductor layer from the light receiving surface and disposed in a position separating the photoelectric conversion sections from each other for each pixel, the pixel separating section being formed by a crystalline semiconductor including an impurity;
- and
- an optical system for guiding incident light to the photoelectric conversion sections.
A solid-state imaging element comprising:
- a semiconductor layer;
- a plurality of photoelectric conversion sections arranged within the semiconductor layer;
- and
- a pixel separating section having uniform width from a light receiving surface of the semiconductor layer to an opposite surface of the semiconductor layer from the light receiving surface and disposed in a position separating the photoelectric conversion sections from each other for each pixel, the pixel separating section being formed by an amorphous semiconductor including an impurity.
Dependencies are inferred from the claim text.