Solid state imaging device, with suppressed dark current, method of manufacturing, and imaging apparatus

An imaging apparatus comprising:

• a condensing optical section that condenses incident light;
• a solid state imaging device that receives the incident light condensed in the condensing optical section and performs photoelectric conversion of the received light;
• and
• a signal processing section that processes signal charges photoelectrically converted,
• wherein,
• the solid state imaging device includes:
• a light sensing section that performs photoelectric conversion of incident light and a peripheral circuit section at a side portion of the light sensing section;
• an insulating layer formed on a light receiving surface of the light sensing section;
• a hole accumulation layer at the light receiving surface of the light sensing section;
• a first layer including at least one of an oxide, a nitride, and an oxynitride on the insulating layer, the first layer having an upper surface that is furthest from the light sensing section and the peripheral circuit section, the upper surface having a first upper surface located under an entire length of the color filter and a second upper surface, and the first and second upper surfaces having different heights such that a distance of the second upper surface from an upper surface of the peripheral circuit section is greater than a distance of the first upper surface from an upper surface of the hole accumulation layer;
• and
• a second layer between the peripheral circuit section and the first layer.