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AssigneeHeadway Technologies, Inc.
InventorsYu-Jen Wang, Witold Kula, Guenole Jan
Estimating the term…
A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness <20 Angstroms is used to achieve high perpendicular magnetic anisotropy and enhanced thermal stability in magnetic devices. A dusting layer made of Co, Ni, Fe or alloy thereof is added to top and bottom surfaces of the CoFeB layer to increase magnetoresistance as well as improve Hc and Hk. Another embodiment includes a non-magnetic metal insertion in the CoFeB free layer. The CoFeB layer with elevated B content may be incorporated as a free layer, dipole layer, or reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Thermal stability is increased such that substantial Hk is retained after annealing to at least 400° C. for 1 hour. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
A multilayer stack in a magnetic device, comprising:
A magnetic device including a stack of layers, comprising:
A magnetic device including a stack of layers, comprising:
A magnetic device including a stack of layers, comprising:
Dependencies are inferred from the claim text.