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US 8,946,832 B2Granted
Filter using a waveguide structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chung Chen, Chewn-Pu Jou, Chin-Wei Kuo
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Abstract
A representative filter comprises a silicon-on-insulator substrate having a top surface, a metal shielding positioned above the top surface of the silicon-on-insulator substrate, and a band-pass filter device positioned above the metal shielding. The band-pass filter device includes a first port, a second port, and a coupling metal positioned between the first and second ports.
Claims12
An integrated circuit comprising:
- a silicon-on-insulator substrate having a top surface;
- a metal shielding positioned vertically above the top surface of the silicon-on-insulator substrate;
- a band-pass filter device positioned vertically above the metal shielding, wherein the band-pass filter device includes a first port, a second port, and a coupling metal positioned on a common horizontal plane, the coupling metal being positioned between the first and second ports;
- and
- a metal-oxide-semiconductor (MOS) varactor including a first port formed in the silicon-on-insulator substrate and a second port formed on the silicon-on-insulator substrate, and a direct current (DC) pad disposed above the metal shielding such that the DC pad is coplanar with the coupling metal and is electrically coupled to the first port of the MOS varactor by way of the metal shielding, wherein the MOS varactor is electrically coupled to the band-pass filter by way of the metal shielding, and
- wherein the metal shielding is configured to reduce direct coupling between the band-pass filter device and the silicon-on-insulator substrate vertically over which the band-pass filter device is disposed.
3 more elements
An integrated circuit comprising:
- a silicon-on-insulator substrate having a top surface;
- a metal shielding positioned vertically above the top surface of the silicon-on-insulator substrate;
- a band-pass filter device positioned vertically above the metal shielding, wherein the band-pass filter device includes a first port, a second port, and a coupling metal positioned on a common horizontal plane, the coupling metal being positioned between the first and second ports;
- and
- a metal-oxide-semiconductor (MOS) varactor coupled to the silicon-on-insulator substrate and the band-pass filter device, wherein the MOS varactor and the band-pass filter are monolithically integrated together as the MOS varactor includes a first port is formed in the silicon-on-insulator substrate and a second port formed on the silicon-on-insulator substrate, and the MOS varactor including a direct current (DC) pad that is coplanar with the coupling metal and is electrically coupled to the first port of the MOS varactor by way of the metal shielding, and
- wherein the metal shielding is configured to reduce direct coupling between the band-pass filter device and the silicon-on-insulator substrate vertically over which the band-pass filter device is disposed.
3 more elements
Dependencies are inferred from the claim text.