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US 8,946,824 B2Granted
Semiconductor device
AssigneePanasonic Corporation
InventorsTomoaki Ikegami, Kazuyuki Nakanishi, Masaki Tamaru
Life of this patent
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Abstract
A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.
Claims18
A semiconductor device, comprising:
- a standard cell having three or more gate patterns extending in a first direction and arranged at an equal pitch along a second direction orthogonal to the first direction;
- and
- a diode cell located next to the standard cell in the first direction which functions as a diode, wherein
- the gate patterns included in the standard cell terminate near a cell boundary between the standard cell and the diode cell, with respective end portions located at a same position in the first direction and having an equal width in the second direction, and
- the diode cell includes:
- at least one diffusion region pattern;
- and
- a plurality of gate patterns extending in the first direction and having a plurality of opposite end portions which are located near the cell boundary and opposed to the end portions of the gate patterns included in the standard cell, and
- the plurality of gate patterns included in the diode cell are arranged at a pitch equal to the pitch at which the gate patterns included in the standard cell are arranged in the second direction, with the plurality of opposite end portions located at a same position in the first direction and having an equal width in the second direction.
6 more elements
Dependencies are inferred from the claim text.