Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same

An electrostatic discharge (ESD) protection device comprising:

• a first doped region of a first doping type disposed in a substrate, the first doped region coupled to a node to be protected by the ESD protection device;
• a first barrier region of a second doping type disposed under the first doped region;
• a first semiconductor region disposed under the first barrier region;
• a second barrier region of the first doping type contacting the first semiconductor region and disposed in the substrate;
• a second doped region of the second doping type disposed in the substrate, wherein the second barrier region is disposed between the first semiconductor region and the second doped region, wherein the first doped region, the first barrier region, the first semiconductor region, the second barrier region, and the second doped region form a first diode;
• a third doped region of the second doping type disposed in the substrate, the third doped region coupled to the node to be protected by the ESD protection device;
• a third barrier region of the first doping type disposed under the third doped region;
• a second semiconductor region disposed under the third barrier region;
• a fourth barrier region of the second doping type contacting the second semiconductor region and disposed in the substrate;
• and
• a fourth doped region of the first doping type disposed in the substrate, wherein the fourth barrier region is disposed between the second semiconductor region and the fourth doped region, wherein the third doped region, the third barrier region, the second semiconductor region, the fourth barrier region, and the fourth doped region form a second diode.