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AssigneeSharp Kabushiki Kaisha
InventorMasahiro Mitani
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Film thickness variations are prevented in a plurality of single crystal semiconductor films separated at a fragile layer reliably and transferred to a base substrate. A method for manufacturing a SOI substrate (33) in which a plurality of SOI layers (15) are disposed on a base substrate (30) includes the steps of bonding a plurality of SOI wafers (10), in which an oxide film (14), a SOI layer (15), a BOX layer (12), and a Si support substrate (13) having a fragile layer (17) formed by ion irradiation in the inside and being made from a single crystal semiconductor material are stacked sequentially, to a base substrate (30) in such a way that the oxide film (14) is located on the side close to the base substrate (30), applying heat to the plurality of SOI wafers (10) to separate part of the Si support substrate (13) at the fragile layer (17) and transfer the oxide film (14), the SOI layer (15), the BOX layer (12), and a single crystal Si layer (18) which is part of the Si support substrate (13) to the base substrate (30), and subjecting the base substrate (30) to an etch back treatment to expose the BOX layer (12) by etching the transferred single crystal Si layer (18).
A method for manufacturing a semiconductor substrate in which a plurality of single crystal semiconductor films are disposed on a base substrate, the method characterized by comprising steps of:
A substrate for forming a semiconductor substrate, for the purpose of forming a semiconductor substrate in which a plurality of single crystal semiconductor films are disposed on a base substrate, characterized in that
A stacked substrate to be bonded to a base substrate for forming a semiconductor substrate in which a plurality of single crystal semiconductor films are disposed on the base substrate, characterized in that
Dependencies are inferred from the claim text.