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US 8,946,817 B2Granted
Semiconductor device with compensation regions
AssigneeInfineon Technologies Austria AG
InventorFranz Hirler
Life of this patent
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Abstract
A semiconductor device includes a semiconductor body including an inner region, and an edge region, a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal, and at least one second doped device region of a second doping type complementary to the first doping type in the inner region and coupled to a second terminal. Further, the semiconductor device includes a minority carrier converter structure in the edge region. The minority carrier converter structure includes a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region.
Claims21
A semiconductor device comprising:
- a semiconductor body comprising an inner region and an edge region;
- a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal;
- at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal;
- and
- a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region, wherein the minority carrier converter structure further comprises a contact region of the first doping type and more highly doped than the first doped device region, wherein the contact region is connected to the conductor and adjoins the first doped device region.
2 more elements
A semiconductor device comprising:
- a semiconductor body comprising an inner region and an edge region;
- a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal;
- at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal;
- and
- a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region, wherein the minority carrier converter structure further comprises a second trap region of the second doping type and more lowly doped than the first trap region, wherein the second trap region adjoins the first doped device region and the first trap region and extends deeper into the semiconductor body from a first surface than the first trap region.
2 more elements
A semiconductor device comprising:
- a semiconductor body comprising an inner region and an edge region;
- a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal;
- at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal;
- and
- a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region, wherein the first trap region surrounds the inner region in a horizontal plane of the semiconductor body.
2 more elements
A semiconductor device comprising:
- a semiconductor body comprising an inner region and an edge region;
- a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal;
- at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal;
- and
- a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region;
- and
- a plurality of first trap regions that are mutually spaced in a horizontal plane of the semiconductor body.
4 more elements
A semiconductor device comprising:
- a semiconductor body comprising an inner region and an edge region;
- a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal;
- at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal;
- and
- a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region, wherein the first device region is a drift region, the second device region is a compensation region, the first terminal is a drain terminal, and the second terminal is a source terminal, and
- wherein the semiconductor device further comprises:
- a source region of the first doping type and a body region of the second doping type, each connected to the source terminal, wherein the body region is arranged between the source region and the drift region;
- and
- a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric.
6 more elements
A semiconductor device comprising:
- a semiconductor body comprising an inner region and an edge region;
- a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal;
- at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal;
- and
- a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region, wherein the first device region is a base region, the second device region is a compensation region, the first terminal is one of an anode and a cathode terminal, and the second terminal is the other one of an anode and a cathode terminal, wherein the semiconductor device further comprises:
- a first emitter region of the second doping type and connected to the first terminal;
- and
- a second emitter region of the first doping type adjoining the base region, and more highly doped than the base region.
5 more elements
Dependencies are inferred from the claim text.