Body-tied, strained-channel multi-gate device and methods of manufacturing same

An integrated circuit comprising:

• a semiconductor substrate having a top surface with a first lattice constant;
• an insulating film disposed on a first portion of said top surface of said semiconductor substrate;
• a plurality of islands extending from a second portion of said top surface of said semiconductor substrate, said islands having a second lattice constant that is different from said first lattice constant, said islands further extending above a top surface of said insulating film, wherein each of said islands has a bi-axial compressive strain created at an interface between the top surface of said semiconductor substrate and a bottom surface of said islands;
• and
• at least one multi-gate device including:
• a gate dielectric disposed on a portion of said top surface of the plurality of islands of at least one of said plurality of islands;
• and
• a gate electrode overlying said gate dielectric;
• wherein the at least one of the plurality of islands forms a body-tied fin-FET with the semiconductor substrate.

A device comprising:

• a silicon containing substrate having a first lattice constant and having a top surface;
• a member protruding from the top surface of said substrate and having a second lattice constant, greater than the first lattice constant, the member being body-tied to the silicon containing substrate, wherein the differences in the first and second lattice constants create a bi-axial compressive strain in the member at an interface between the top surface of said substrate and a bottom surface of the member;
• an insulating material formed atop said top surface of said member;
• and
• a conducting material formed atop said insulating material.