Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Hyun Soo Shon
Life of this patent
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Abstract
A semiconductor device includes word lines and interlayer insulating layers alternately stacked over a substrate, vertical channel layers protruding from the substrate and passing through the word lines and the interlayer insulating layers, a tunnel insulating layer surrounding each of the vertical channel layers, a charge trap layer surrounding the tunnel insulating layer, wherein first regions of the charge trap layer between the tunnel insulating layer and the word lines have a thickness smaller than a thickness of second regions thereof between the tunnel insulating layer and the interlayer insulating layers, and first charge blocking layer patterns surrounding the first regions of the charge trap layer.
Claims9
A semiconductor device, comprising:
- word lines and interlayer insulating layers alternately stacked over a substrate;
- vertical channel layers protruding from the substrate and passing through the word lines and the interlayer insulating layers;
- a tunnel insulating layer surrounding each of the vertical channel layers;
- a charge trap layer surrounding the tunnel insulating layer, wherein first regions of the charge trap layer between the tunnel insulating layer and the word lines have a thickness smaller than a thickness of second regions thereof between the tunnel insulating layer and the interlayer insulating layers;
- first charge blocking layer patterns surrounding the first regions of the charge trap layer and interposed only between the charge trap layer and the word lines;
- and
- second charge blocking layer patterns interposed only between the first regions of the charge trap layer and the first charge blocking layer patterns.
Dependencies are inferred from the claim text.