Field effect transistors (FETs) and methods of manufacture
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
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Abstract
An improved field effect transistors (FETs) and methods of manufacturing the field effect transistors (FETs) are provided. The method of manufacturing a zero capacitance random access memory cell (ZRAM) includes comprises forming a finFET on a substrate and enhancing a storage capacitance of the finFET. The enhancement can be by either adding a storage capacity to the finFET or altering a portion of the finFET after formation of a fin body of the finFET.
Claims12
A zero capacitance random access memory cell (ZRAM), comprising a fin body having a doped portion on a single side of the fin body to increase storage capacitance and to form an asymmetric charge distribution,
- further comprising a gate structure covering first and second sides of the fin body, wherein a first side of the gate structure has an effective work function near a conduction band of the fin body and a second side of the gate structure has an effective work function near a valence band of the fin body, which serves to accumulate holes in the portions of the fin body which are adjacent to the portion of the gate structure having the work function near the valence band,
- wherein the fin body comprises an active silicon layer, and further comprising:
- a dielectric layer deposited on the fin body and an exposed buried oxide layer;
- a metal layer deposited on the dielectric material;
- a second metal layer deposited on the metal layer, the second metal layer having the work function nearby the valence band of the fin body.
A zero capacitance random access memory cell (ZRAM), comprising:
- a fin body comprising an active silicon layer and a doped portion on a single side of the fin body to increase storage capacitance and to form an asymmetric charge distribution;
- a dielectric layer deposited on the fin body and a buried oxide layer;
- a metal layer deposited on the dielectric material;
- a second metal layer deposited on the metal layer, the second metal layer having a work function nearby a valence band of the fin body, wherein the second metal layer is a patterned layer to expose a portion of the metal layer on a side of the fin body.
Dependencies are inferred from the claim text.