Solid-state imaging device and electronic equipment

A backside illumination type solid-state imaging device, comprising:

• stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit comprising a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit comprising a logic circuit and a second multi-layered wiring layer;
• a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit;
• and
• a second shield wire which shields the connection wire and a first wire and a second wire which connect to another connection wire adjacent thereto,
• wherein,
• the connection wire a penetrating connection conductor which penetrates the first semiconductor chip unit and connects to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer, and the second shield wire is formed with a wiring in a necessary layer in the first multi-layered wiring layer and the second multi-layered wiring layer.

An electronic equipment comprising:

• a solid-state imaging device;
• an optical system configured to guide incident light to a photodiode of the solid-state imaging device;
• and
• a signal processing circuit configured to process output signals of the solid-state imaging device, the solid-state imaging device including (a) stacked semiconductor chips with two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit comprising a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit comprising a logic circuit and a second multi-layered wiring layer (b) a plurality connection wires arranged horizontally along the first multi-layered wiring layer, each connection wire associated with a stacked semiconductor chip and which connects the first semiconductor chip unit and the second semiconductor chip unit, (c) a first and second routing wire, each routing wire connecting adjacent connection wires, and (d) a first shield wire configured to shield a gap between one of the routing wires and adjacent connection wires
• wherein,
• each connection wire includes a penetrating connection conductor which penetrates the first semiconductor chip unit and connects to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer.

Electronic equipment comprising:

• a solid-state imaging device;
• an optical system configured to guide incident light to a photodiode of the solid-state imaging device;
• and
• a signal processing circuit configured to process output signals of the solid-state imaging device,
• wherein,
• the solid-state imaging device includes (a) stacked semiconductor chips with two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit comprising a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit comprising a logic circuit and a second multi-layered wiring layer, (b) a plurality of connection wires arranged horizontally along the first multi-layered wiring layer, each connection wire associated with a stacked semiconductor chip and which connects the first semiconductor chip unit and the second semiconductor chip unit (c) a first and second routing wire, each routing wire connecting adjacent connection wires, and (d) a first shield wire configured to shield a gap between one of the routing wires and adjacent connection wires, and a each connection wire includes a penetrating connection conductor which penetrates the first semiconductor chip unit and being connected to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer.