Solid-state imaging device, method of manufacturing solid-state imaging device, apparatus for manufacturing semiconductor device, method of manufacturing semiconductor device, and electronic device

A method of manufacturing a solid-state imaging device, comprising:

• bonding a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer with a circuit-side semiconductor layer and a circuit-side wiring layer in a manner such that a surface of the sensor-side wiring layer faces a surface of the circuit-side wiring layer;
• forming an insulating layer on a light receiving surface side of the sensor substrate;
• forming a connection section in a connection unit region outside the pixel region, the connection section having a first through electrode provided to reach from a surface of the insulating layer to the sensor-side wiring layer, a second through electrode provided to reach from the surface of the insulating layer to the circuit-side wiring layer, and a connection electrode provided on the surface of the insulating layer and connecting the first through electrode and the second through electrode;
• and
• etching the insulating layer to a predetermined depth in a manner that a film thickness gradually thins from the connection unit region to the pixel region.

An electronic device comprising:

• a solid-state imaging device;
• and
• a signal processing circuit configured to process an output signal output from the solid-state imaging device,
• wherein the solid-state imaging device includes
• a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer,
• a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate,
• a connection unit region in which a connection section is provided, the connection section having a first through electrode provided to reach from a light receiving surface side of the sensor-side semiconductor layer to the sensor-side wiring layer, a second through electrode provided to reach from the light receiving surface side of the sensor-side semiconductor layer to the circuit-side wiring layer, and a connection electrode provided on a surface of the light receiving surface side of the sensor-side semiconductor layer and connecting the first through electrode and the second through electrode, and
• an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.