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US 8,946,796 B2Granted
Image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorJin Youn Cho
Life of this patent
Estimating the term…
Abstract
An image sensor may include at least one device isolation layer that passes through an epitaxial layer in a semiconductor substrate to isolate pixel regions, a light-receiving element in each pixel region, and a transistor in the active region of the semiconductor substrate partitioned by the device isolation layer.
Claims20
An apparatus comprising:
- at least one device isolation layer passing through an epitaxial layer in a semiconductor substrate;
- a light-receiving element in each pixel region;
- a transistor in an active region of the semiconductor substrate, partitioned by the device isolation layer;
- and
- a buried insulating layer below the epitaxial layer in the semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.