US 8,946,792 B2Granted

Dummy fin formation by gas cluster ion beam

AssigneeInternational Business Machines Corporation

InventorsKangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus Eduardus Standaert, Tenko Yamashita

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Abstract

FinFET structures with dielectric fins and methods of fabrication are disclosed. A gas cluster ion beam (GCIB) tool is used to apply an ion beam to exposed fins, which converts the fins from a semiconductor material such as silicon, to a dielectric such as silicon nitride or silicon oxide. Unlike some prior art techniques, where some fins are removed prior to fin merging, in embodiments of the present invention, fins are not removed. Instead, semiconductor (silicon) fins are converted to dielectric (nitride/oxide) fins where it is desirable to have isolation between groups of fins that comprise various finFET devices on an integrated circuit (IC).

Claims2

Dependent claims

A semiconductor structure comprising:

a semiconductor substrate;
an insulator layer disposed on the semiconductor substrate;
a plurality of fins disposed on the insulator layer;
wherein a first subset of the plurality of fins are comprised of a semiconductor material and wherein a second subset of the plurality of fins are comprised of a dielectric material;
and
wherein the second subset of the plurality of fins is comprised of silicon nitride and interleaved with the first subset of the plurality of fins;
and
wherein groups of fins from the first subset of the plurality of fins are merged with epitaxially grown silicon, and wherein at least one group of fins from the first subset of the plurality of fins is merged with n-doped epitaxially grown silicon, and wherein at least another one group of fins from the first subset of the plurality of fins is merged with p-type doped epitaxially grown silicon.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/684,842Filed 26 Nov 2012
Published: US 2014/0145248 A129 May 2014
Granted: 3 Feb 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 30/0243
Of fin field-effect transistors [FinFET]: using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide…
H10D 30/60
Field-effect transistors [FET]: insulated-gate field-effect transistors [IGFET]
H10D 84/0151
The components including insulated gates, e.g. IGFETs: manufacturing their isolation regions