Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTomokazu Yokoi, Yasumasa Yamane
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Abstract
A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region.
Claims12
A semiconductor device comprising:
- a c-axis aligned crystalline oxide semiconductor layer including indium, gallium, and zinc, the crystalline oxide semiconductor layer comprising a source region, a drain region, and a channel formation region;
- a gate insulating layer over the channel formation region;
- and
- a gate electrode over the channel formation region with the gate insulating layer positioned therebetween,
- wherein the source region and the drain region are crystalline regions containing nitrogen.
A semiconductor device comprising:
- a c-axis aligned crystalline oxide semiconductor layer including indium, gallium, and zinc, the crystalline oxide semiconductor layer comprising a source region, a drain region, and a channel formation region;
- a gate insulating layer over the channel formation region;
- a gate electrode over the channel formation region with the gate insulating layer positioned therebetween;
- an insulating layer having openings and positioned over the crystalline oxide semiconductor layer and the gate electrode;
- and
- a source electrode and a drain electrode respectively in contact with the source region and the drain region through the openings in the insulating layer,
- wherein the source region and the drain region are crystalline regions containing nitrogen.
Dependencies are inferred from the claim text.