Ionic field effect transistor having heterogeneous triangular nanochannel and method of manufacturing the same
AssigneePostech Academy-Industry Foundation
InventorsGeunbae Lim, Sung Jae Kim, Bumjoo Kim, Joonseong Heo, Hyukjin J. Kwon
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Abstract
An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer.
Claims9
An ionic field effect transistor, comprising:
- a substrate;
- a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed;
- and
- a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path,
- wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer.
A method of manufacturing an ionic field effect transistor, the method comprising:
- forming a polymer layer having a first flow path and a second flow path that is separately disposed from the first flow path;
- forming a gate electrode that is connected in one direction on a substrate and that is made of a metal;
- and
- forming a heterogeneous triangular nanochannel that is enclosed by the polymer layer and the substrate and the gate electrode by bonding the polymer layer and the substrate.
Dependencies are inferred from the claim text.