US 8,946,783 B2 · Image sensors having reduced dark level differences

Abstract

An image sensor including a semiconductor layer including a plurality of unit pixels each including a photoelectric conversion device and read devices; and an insulating layer including a light-shielding pattern defining a light-receiving region and a light-shielding region of the semiconductor layer, the insulating layer covering one surface of the semiconductor layer. The semiconductor layer further includes a potential drain region formed adjacent to an interface between the semiconductor layer and an insulating layer in the light-shielding region, wherein electrons generated due to defects occurring at the interface are accumulated in the potential drain region. At least one of the unit pixels in the light-shielding region provides a drain path for draining the electrons accumulated in the potential drain region.

Claims23

Dependent claims

An image sensor comprising:

a semiconductor layer including a plurality of unit pixels each including a photoelectric conversion device and read devices;
and
an insulating layer including a light-shielding pattern defining a light-receiving region and a light-shielding region of the semiconductor layer, the insulating layer on a first surface of the semiconductor layer,
a potential drain region in the semiconductor layer between the photoelectric conversion device of a first of the unit pixels and the insulating layer in the light-shielding region, and
at least a first of the unit pixels in the light-shielding region provides a drain path for draining electrons that accumulate in the potential drain region.

2 more elements

Dependencies are inferred from the claim text.

Image sensors having reduced dark level differences

Life of this patent

Image sensors having reduced dark level differences

Life of this patent

Abstract

Claims23