Integrated circuit including gate electrode conductive structures with different extension distances beyond contact

A method for creating a layout of an integrated circuit, comprising:

• operating a computer to define layouts of four conductive linear-shaped structures each respectively including a gate electrode portion and an extension portion extending away from the gate electrode portion, each conductive linear-shaped structure layout extending lengthwise in a parallel direction, wherein each layout of the four conductive linear-shaped structures includes only one gate electrode portion, wherein gate electrode portions of two of the four conductive linear-shaped structures are respectively defined to form a gate electrode of a first transistor of a first transistor type and a gate electrode of a second transistor of the first transistor type, and wherein gate electrode portions of two of the four conductive linear-shaped structures are respectively defined to form a gate electrode of a first transistor of a second transistor type and a gate electrode of a second transistor of the second transistor type;
• operating the computer to define layouts of four conductive contacting structures to respectively connect to the extension portions of the four conductive linear-shaped structures such that each extension portion has a respective contact-to-end distance as measured in the parallel direction away from the gate electrode portion, wherein at least two of the contact-to-end distances are different;
• operating the computer to define a layout of a fifth conductive linear-shaped structure including two gate electrode portions that are respectively defined to form gate electrodes of third transistors of the first and second transistor types, the third transistors of the first and second transistor types respectively positioned next to the first transistors of the first and second transistor types;
• and
• operating the computer to define a layout of a sixth conductive linear-shaped structure including two gate electrode portions that are respectively defined to farm gate electrodes of fourth transistors of the first and second transistor types, the fourth transistors of the first and second transistor types respectively positioned next to the second transistors of the first and second transistor types.

A data storage device having program instructions stored thereon for a semiconductor device layout, comprising:

• program instructions for defining layouts of four conductive linear-shaped structures each respectively including a gate electrode portion and an extension portion extending away from the gate electrode portion, each conductive linear-shaped structure layout extending lengthwise in a parallel direction, wherein each layout of the four conductive linear-shaped structures includes only one gate electrode portion, wherein gate electrode portions of two of the four conductive linear-shaped structures are respectively defined to form a gate electrode of a first transistor of a first transistor type and a gate electrode of a second transistor of the first transistor type, and wherein gate electrode portions of two of the four conductive linear-shaped structures are respectively defined to form a gate electrode of a first transistor of a second transistor type and a gate electrode of a second transistor of the second transistor type;
• program instructions for defining layouts of four conductive contacting structures to respectively connect to the extension portions of the four conductive linear-shaped structures such that each extension portion has a respective contact-to-end distance as measured in the parallel direction away from the gate electrode portion, wherein at least two of the contact-to-end distances are different;
• program instructions for defining a layout of a fifth conductive linear-shaped structure including two gate electrode portions that are respectively defined to form gate electrodes of third transistors of the first and second transistor types, the third transistors of the first and second transistor types respectively positioned next to the first transistors of the first and second transistor types;
• and
• program instructions for defining a layout of a sixth conductive linear-shaped structure including two gate electrode portions that are respectively defined to form gate electrodes of fourth transistors of the first and second transistor types, the fourth transistors of the first and second transistor types respectively positioned next to the second transistors of the first and second transistor types.