Active area shaping of III-nitride devices utilizing steps of source-side and drain-side field plates
AssigneeInternational Rectifier Corporation
InventorMichael A. Briere
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Abstract
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride heterojunction. A gate arrangement is situated in the gate well and includes a gate electrode, a source-side field plate, and a drain-side field plate. The source-side field plate and the drain-side field plate each include one or more steps, where the drain-side field plate has a different number of the one or more steps than the source-side field plate.
Claims19
A III-nitride semiconductor device comprising:
- a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas;
- a gate well formed in a dielectric body, said dielectric body situated over said III-nitride heterojunction, said first III-nitride body being interposed between said dielectric body and said second III-nitride body;
- a gate arrangement situated in said gate well and comprising a gate electrode, a source-side field plate, and a drain-side field plate;
- said source-side field plate and said drain-side field plate each comprising one or more steps, wherein said drain-side field plate has a greater number of said one or more steps than said source-side field plate.
A III-nitride semiconductor device comprising:
- a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas;
- a gate well formed in a dielectric body, said dielectric body situated over said III-nitride heterojunction and comprising dielectric segments, said first III-nitride body being interposed between said dielectric body and said second III-nitride body;
- a gate arrangement situated in said gate well and comprising a gate electrode, a source-side field plate, and a drain-side field plate;
- said source-side field plate and said drain-side field plate each comprising one or more steps situated over said dielectric segments, wherein said drain-side field plate is situated over a greater number of said dielectric segments than said source-side field plate.
Dependencies are inferred from the claim text.