Nitride semiconductor structure
AssigneeIndustrial Technology Research Institute
InventorsChen-Zi Liao, Chih-Wei Hu, Yen-Hsiang Fang, Rong Xuan
Life of this patent
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Abstract
A nitride semiconductor structure is provided. The nitride semiconductor structure at least includes a silicon substrate, a AlN layer, a AlGaN layer and a GaN layer formed on the AlGaN layer. The silicon substrate has a surface tilted at 0<tilted≦0.5° with respect to a axis perpendicular to a (111) crystal plane, and the AlN layer is formed on the surface. The AlGaN layer is formed on the AlN layer. Moreover, an Al content in the AlGaN layer is decreased gradually in a layer thickness direction from the silicon substrate side toward the GaN layer side.
Claims19
A nitride semiconductor structure, comprising:
- a silicon substrate, having a surface tilted at 0<tilted≦0.5° with respect to a axis perpendicular to a (111) crystal plane;
- a AlN layer, formed on the surface of the silicon substrate;
- a AlGaN layer, formed on the AlN layer;
- and
- a GaN layer, formed on the AlGaN layer, wherein an Al content in the AlGaN layer is decreased gradually in a layer thickness direction from the AlN layer side toward the GaN layer side, wherein the GaN layer is a multilayer structure comprising a plurality of GaN films.
A nitride semiconductor structure, comprising:
- a silicon substrate;
- a AlN layer, formed on the surface of the silicon substrate;
- a AlGaN layer, formed on the AlN layer, wherein a variation rate in the lattice constant of the AlGaN layer is from 5.08%/μm to 1.27%/μm;
- and
- a GaN layer, formed on the AlGaN layer, wherein the GaN layer is a multilayered structure comprising a plurality of GaN films.
Dependencies are inferred from the claim text.